New and Original P-Channel MOS Field-Effect Transistor (IPB90P04P4L)

• shape: Flat
• Conductive Type: Unipolar Integrated Circuit
• Integration: GSI
• Technics: Thick Film IC
• Type: Digital / Analog IC
• Application: New Energy Vehicle
• Model NO.: IPB90P04P4L
• Supply Ability: 1000000 Piece/Pieces Per Month
• Minimum Packing Quantity: 2500 PCS
• Minimum Packing Gross: 0.62 Kg
• Country of Original: China
• Manufacture Year: 2021
• Encapsulation: to-252
• Batch No: 21+
• Vds Drain Source Breakdown Voltage: 40V
• ID Continuous Drain Current: 90A
• RDS on Drain Source Conduction Resistanc: 6.6 Mohms
• Vgs - Grid Source Voltage: 4.5V
• Vgs Th Gate Source Threshold Voltage: 1.2V
• Qg Grid Charge: 135nc
• Minimum Operating Temperature: -55c
• Maximum Operating Temperature: +175c
• Transport Package: Carton Box
• Specification: 22x17
• Trademark: EDT
• Origin: Zhejiang
• HS Code: 8529905000
• Production Capacity: 1000000

Product Description

Overview

Quick Details

Model Number:            IPB90P04P4L

Type:                            integrated circuit

Place of Origin:            Guangdong, China

Brand Name:               INFINEON

Applications:               Industrial Application

Supply Ability

Supply Ability 1000000 Piece/Pieces per Month

 

Packaging & Delivery

Lead Time:

Quantity(pieces)	1 - 1000	>1000
Est. Time(days)	7	To be negotiated