New Original Electronic Component Mosfet

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Product Highlights

  • Third-Generation MOSFET Technology: Optimized balance of switching speed, ruggedness, and low on-resistance.
  • RoHS Compliant: Lead-free environmentally friendly product.
  • High Power Dissipation: Up to 3.1W power dissipation with enlarged heatsinking tab.
  • Fast Switching Performance: Suitable for high-frequency switching applications.
  • Surface Mount Package: SOT-223 package supports automated assembly.
  • High Supply Capacity: Supply ability of 1,000,000 pieces per month.

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New Original Electronic Component Mosfet
New Original Electronic Component Mosfet pictures & photos
New Original Electronic Component Mosfet
New Original Electronic Component Mosfet pictures & photos
New Original Electronic Component Mosfet
New Original Electronic Component Mosfet pictures & photos
New Original Electronic Component Mosfet
New Original Electronic Component Mosfet pictures & photos
New Original Electronic Component Mosfet
New Original Electronic Component Mosfet pictures & photos
New Original Electronic Component Mosfet
  • New Original Electronic Component Mosfet
    New Original Electronic Component Mosfet
  • New Original Electronic Component Mosfet
    New Original Electronic Component Mosfet
  • New Original Electronic Component Mosfet
    New Original Electronic Component Mosfet
  • New Original Electronic Component Mosfet
    New Original Electronic Component Mosfet
  • New Original Electronic Component Mosfet
    New Original Electronic Component Mosfet
  • New Original Electronic Component Mosfet
    New Original Electronic Component Mosfet

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Product Description

Product Overview

The IRFL014TRPBF is an N-channel power MOSFET offered in a SOT-223 surface-mount package. Featuring a drain-source voltage of 60V, continuous drain current of 2.7A, and on-resistance of 200mΩ, this device is part of the third-generation power MOSFET family, providing an optimal balance of fast switching, ruggedized device design, and low on-resistance. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques, with an enlarged heatsinking tab for improved thermal performance, enabling power dissipation of up to 3.1W in typical applications.

Key Features

  1. N-Channel Enhancement Mode: Standard N-channel MOSFET with enhancement mode operation

  2. Third-Generation Power MOSFET Technology: Optimized balance of switching speed, ruggedness, and on-resistance

  3. Low On-Resistance: RDS(on) = 200mΩ @ VGS = 10V for reduced conduction losses

  4. Fast Switching Performance: Suitable for high-frequency switching applications

  5. SOT-223 Surface Mount Package: Supports automated assembly with enhanced thermal performance

  6. Wide Temperature Range: -55°C to +150°C

  7. RoHS Compliant: Lead-free environmentally friendly product

Technical Specifications

 
 
Parameter Value
Type N-Channel Power MOSFET
Drain-Source Voltage (VDS) 60V
Continuous Drain Current (ID) 2.7A
On-Resistance (RDS(on)) 200mΩ @ 10V
Gate Threshold Voltage (VGS(th)) 4V (Max)
Power Dissipation (PD) 3.1W
Gate Charge (Qg) 11nC @ 10V
Operating Temperature -55°C ~ +150°C
Package SOT-223

Applications

  • Switched Mode Power Supplies

  • DC-DC Converters

  • Load Switches

  • Motor Drives

Quick Details
Model Number:            IRFL014TRPBF

Type:                            integrated circuit

Place of Origin:            Guangdong, China

Brand Name:               Infineon

Applications:               Industrial Application
Supply Ability
Supply Ability 1000000 Piece/Pieces per Month

 
Packaging & Delivery
Lead Time:
Quantity(pieces) 1 - 1000 >1000
Est. Time(days) 7 To be negotiated
New Original Electronic Component MosfetNew Original Electronic Component MosfetNew Original Electronic Component Mosfet

About the Supplier

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Hangzhou Electric Driving Technology Co., Ltd.
Hangzhou Electric Driving Technology Co., Ltd.
Hangzhou Electric Driving Technology Co., Ltd.
Hangzhou Electric Driving Technology Co., Ltd.
Hangzhou Electric Driving Technology Co., Ltd.
Hangzhou Electric Driving Technology Co., Ltd.
Hangzhou Electric Driving Technology Co., Ltd.
Hangzhou Electric Driving Technology Co., Ltd.

About Our Factory & Business Background

Address
Room1401, Yaqi Building, No. 3786 Jiangnan Avenue, Binjiang District, Hangzhou, Zhejiang, China
Terms of Payment
LC, T/T, PayPal, Western Union
International Commercial Terms(Incoterms)
FOB, CIF, FCA, EXW
Average Lead Time
Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays
Nearest Port
ningbo;shanghai

Our Production Capability & Technical Expertise

Main Products
IC Chip, Integrated Circuit, Diode, Resister, Transformer, Capacitor, Stepper Motor, GPS Module, Transistor

Our Industry Experience & Global Business Record

Export Year
2010-10-08
Main Markets
South America, Eastern Europe, Southeast Asia, Mid East, Western Europe

FAQ

What is the maximum drain-source voltage?
The device features a drain-source voltage of 60V.
What is the continuous drain current?
The continuous drain current is 2.7A.
What is the lead time for orders?
Lead time is 7 days for quantities over 1000 pieces, or to be negotiated.
What payment terms are accepted?
Accepted payment terms include LC, T/T, PayPal, and Western Union.
Is the product RoHS compliant?
Yes, the product is RoHS compliant and lead-free.
What are the typical applications?
Typical applications include switched mode power supplies, DC-DC converters, load switches, and motor drives.

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